View RTP315N10F7_8404979.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

this is preliminary information on a new product foreseen to be developed. details are subject to change without notice. september 2014 docid026884 rev 1 1/13 RTP315N10F7 aerospace and defense n-channel 100 v, 2.3 m typ., 180 a stripfet? f7 power mosfet in a to-220 package datasheet - target specification figure 1. internal schematic diagram features ? intended for use in aerospace and defense applications ? dedicated traceability and part marking ? production parts approval documents available ? adapted extended life time and obsolescence management ? extended product change notification process ? designed and manufactured to meet sub ppm quality goals ? extended screening capability on request ? ultra low on-resistance ? 100% avalanche tested applications ? switching applications description this n-channel power mosfet utilizes the stripfet? f7 technology with enhanced trench- gate structure that result in very low on-state resistance while also reducing internal capacitances and gate charge for faster and very efficient switching. 1 2 3 tab to-220 $0y '7$% * 6 order code v ds r ds(on) max. i d RTP315N10F7 100 v 2.7 m 180 a table 1. device summary order code marking package packaging RTP315N10F7 r315n10f7 to-220 tube www.st.com
contents RTP315N10F7 2/13 docid026884 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
docid026884 rev 1 3/13 RTP315N10F7 electrical ratings 13 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 100 v v gs gate-source voltage 20 v i d (1) 1. current limited by package. drain current (continuous) at t c = 25c 180 a i d (1) drain current (continuous) at t c =100c 120 a i dm (2) 2. pulse width limited by safe operating area. drain current (pulsed) 720 a p tot total dissipation at t c = 25c 315 w derating factor 2.1 w/c e as (3) 3. starting t j =25c, i d =60 a, v dd =50 v single pulse avalanche energy (t j = 25 c, l=0.55 mh, i as =65 a) 1j t j operating junction temperature - 55 to 175 c t stg storage temperature c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case 0.48 c/w r thj-amb thermal resistance junction-ambient max 62.5 c/w
electrical characteristics RTP315N10F7 4/13 docid026884 rev 1 2 electrical characteristics (t case = 25 c unless otherwise specified). table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage v gs = 0, i d = 250 a 100 v i dss zero gate voltage drain current () v gs = 0, v ds = 100 v 1 a v gs = 0, v ds = 100 v, t c = 125c 100 a i gss gate body leakage current v ds = 0, v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2.5 3.5 4.5 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 60 a 2.3 2.7 m table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v gs = 0, v ds = 25 v, f = 1 mhz - 12800 - pf c oss output capacitance - 3500 - pf c rss reverse transfer capacitance -170- pf q g total gate charge v dd = 50 v, i d = 180 a, v gs = 10 v (see figure 14 ) -180- nc q gs gate-source charge - 78 - nc q gd gate-source charge - 34 - nc table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 50 v, i d = 90 a r g =4.7 v gs = 10 v (see figure 13 , figure 18 ) -62-ns t r rise time - 108 - ns t d(off) turn-off delay time - 148 - ns t f fall time - 40 - ns
docid026884 rev 1 5/13 RTP315N10F7 electrical characteristics 13 table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 180 a i sdm (1) 1. pulse width limited by safe operating area. source-drain current (pulsed) -720a v sd (2) 2. pulse duration = 300s, duty cycle 1.5% forward on voltage i sd =60 a, v gs =0 - 1.5 v t rr reverse recovery time i sd =180 a, di/dt = 100 a/s, v dd =80 v, tj=150c (see figure 15 ) -85 ns q rr reverse recovery charge - 200 nc i rrm reverse recovery current - 4.7 a
electrical characteristics RTP315N10F7 6/13 docid026884 rev 1 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance i d 100 10 1 0.1 0.1 1 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 100s 1ms 10ms tj=175c tc=25c sinlge pulse am14733v1 10 -5 10 -4 10 -3 10 -2 10 -1 t p (s) 10 -2 10 -1 k 0.2 0.05 0.02 0.01 0.1 zth=k rthj-c =tp/ tp single pulse =0.5 280tok 5v 6v 7v v gs =10v i d 150 100 50 0 0 4 v ds (v) 8 (a) 2 6 200 250 8v 300 am14734v1 i d 150 100 50 0 0 4 v gs (v) 8 (a) 2 6 200 250 v ds = 2v 300 350 13 5 7 am14735v1 v gs 6 4 2 0 0 q g (nc) (v) 100 8 50 10 v dd =50v i d =180a 150 am14736v1 r ds(on) 2.25 2.20 2.15 2.10 0 80 i d (a) (m ) 40 120 2.30 2.35 2.40 2.45 v gs =10v 160 am14737v1
docid026884 rev 1 7/13 RTP315N10F7 electrical characteristics 13 figure 8. capacitance variations figure 9. source-drain diode forward characteristics figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on-resistance vs temperature figure 12. normalized v (br)dss vs temperature c 6000 4000 2000 0 0 40 v ds (v) (pf) 20 8000 60 ciss coss crss 10000 14000 80 100 12000 am14738v1 t j =-50c t j =150c t j =25c v sd 0 40 i sd (a) (v) 160 80 120 0.45 0.55 0.65 0.75 0.85 0.95 1.05 am14739v1 v gs(th) 0.90 0.80 0.70 0.60 t j (c) (norm) 1.0 0 -25 75 25 -75 125 i d = 250a am14741v1 r ds(on) 1.6 1.2 0.8 0.4 0 t j (c) (norm) -25 75 25 -75 125 2.0 i d = 60a am14740v1 0 -25 75 25 -75 125 v (br)dss t j (c) (norm) 0.94 0.96 0.98 1.00 1.02 1.04 i d = 1ma am14742v1
test circuits RTP315N10F7 8/13 docid026884 rev 1 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive waveform figure 18. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
docid026884 rev 1 9/13 RTP315N10F7 package mechanical data 13 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package mechanical data RTP315N10F7 10/13 docid026884 rev 1 figure 19. to-220 type a drawing bw\sh$b5hyb7
docid026884 rev 1 11/13 RTP315N10F7 package mechanical data 13 table 8. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p3.75 3.85 q2.65 2.95
revision history RTP315N10F7 12/13 docid026884 rev 1 5 revision history table 9. document revision history date revision changes 26-sep-2014 1 initial version.
docid026884 rev 1 13/13 RTP315N10F7 13 important notice ? please read carefully stmicroelectronics nv and its subsidiaries (?st?) reserve the right to make changes, corrections, enhancements, modifications, and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant in formation on st products before placing orders. st products are sold pursuant to st?s terms and conditions of sale in place at the time of o rder acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers? products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2014 stmicroelectronics ? all rights reserved

▲Up To Search▲

Price & Availability of RTP315N10F7

	To Download RTP315N10F7 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .